The Conference Program (PDF)

Session Topics The technical program will consist of the following session topics, but not exclusively Global modeling of melt and solution growth of semiconductor, metal, oxide and other optical crystals by Cz, VGF, FZ, EFG and other related methods 2D, 3D, time-dependent models convective phenomena (e.g. turbulence) in large melts including magnetic fields modeling of radiative heat transfer in participating media defect formation (point defects, dislocations) Global modeling of CVD and vapor growth CVD and especially MOCVD of epitaxial layers of compound semiconductors, Si, SiGe, etc HVPE growth of GaN and sublimation-type growth of SiC, GaN, AlN, II-VI compounds Modeling of crystal growth phenomena on a mesoscopic scale phase field growth kinetics, e.g. step flow facet effects cellular automata Modeling of crystal growth on the atomistic scale kinetic Monte Carlo simulations modeling of material properties ab initio calculations, density functional theory molecular dynamics modeling of nucleation and early stages of growth and growth of nano-crystals Multi-scale modeling addressing the connection/interface problems of    - quantum mechanics – empirical potentials (QM/MM)    - atomistic models – continuum approaches development of hierarchical (bottom-up) methods facet formation Advanced numerical techniques applied to modeling of crystal growth frame works, middle ware strategies for process optimization and model-based control coupling of codes mixed grids and solution adaptive grids List of Invited Speakers with Tentative Titles W. Von Ammon (Germany), Simulations in industrial silicon crystal growth: from thermal environment and melt convection to crystal properties K. Kakimoto (Japan), Global modeling of melt growth A. Muiznieks (Latvia), Convective phenomena in large melts including magnetic fields T. Tsukuada (Japan), Modeling of radiative heat transfer in participating media T. Sinno (USA), Formation of point defects N. Miyazaki (Japan), Formation of dislocations C. Kleijn (Netherlands), Global and multi-scale modeling of CVD processes for silicon technology R. Talalaev (USA), MOCVD of compound semiconductors (III-Vs especially GaN-based) M. Plapp (France), Phase field modeling J. Krug (Germany), Modeling of growth kinetics on a mesoscopic scale Ch. A. Gandin (France), Cellular automata J. Neugebauer (Germany), Modeling of crystal growth on atomistic scale by ab initio technique W. Dreyer (Germany), Multi-scale modeling C. Lan (Taiwan), Modeling of facet formation J. Derby (USA), Coupling of codes J. Fainberg (Germany), A new hybrid method for the global modeling of convection in CZ crystal growth configurations Schedule of Technical Program The technical sessions of IWMCG-5 will start on Monday, September 11, 2006 at 8:20am. The technical program of IWMCG-5 will be closed on Wednesday, September 13 2006 at 5:30 pm. Abstracts An extended 2 page abstract including figures should be sent by e-mail as MS-WORD or PDF file prior to February 28, 2006 to: IWMCG5-abstract@iisb.fraunhofer.de The abstract should be written in English and typed single-spaced with size 12 characters. A template is enclosed and can be also downloaded from here. Authors will be informed about the acceptance of their abstracts, in the form of oral or poster presentation, before April 30, 2006. The accepted abstracts will be published in the Conference Volume which is distributed to all participants at the conference. Authors of invited talks and selected contributions will be invited to submit a full paper according to the guidelines of the Journal of Crystal Growth for preparation of a manuscript.  These papers will be refereed for publication in a special issue of the Journal of Crystal Growth. Details will be communicated to the authors upon notification of acceptance of the abstracts.